C2M0045170P Details_C2M0045170P PDF Document_Cree/Wolfspeed-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	C2M™
Package	Tube
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1700 V
Current - Continuous Drain (Id) @ 25°C	72A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	59mOhm @ 50A, 20V
Vgs(th) (Max) @ Id	4V @ 18mA
Gate Charge (Qg) (Max) @ Vgs	188 nC @ 20 V
Vgs (Max)	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	3672 pF @ 1000 V
FET Feature	-
Power Dissipation (Max)	520W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-4
Package / Case	TO-247-4

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