NDF05N50ZH Details_NDF05N50ZH PDF Document

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	1.5Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id	4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	28 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	632 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	30W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3 Full Pack
Package / Case	TO-220-3 Full Pack

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