APT30M30JLL Details_APT30M30JLL PDF Document_Microchip Technology-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	*
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	300 V
Current - Continuous Drain (Id) @ 25°C	88A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	30mOhm @ 44A, 10V
Vgs(th) (Max) @ Id	5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs	140 nC @ 10 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	7030 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-
Mounting Type	Chassis Mount
Supplier Device Package	ISOTOP®
Package / Case	SOT-227-4, miniBLOC

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