YJQ1216A-F1-1100HF Details_YJQ1216A-F1-1100HF PDF Document_Yangzhou Yangjie Electronic Technology Co.,Ltd-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	19mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	72.8 nC @ 10 V
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	2992 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	18W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-DFN (2x2)
Package / Case	6-UDFN Exposed Pad

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