C3M0021120D Details_C3M0021120D PDF Document_Cree/Wolfspeed-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	C3M™
Package	Tube
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	28.8mOhm @ 50A, 15V
Vgs(th) (Max) @ Id	3.6V @ 17.7mA
Gate Charge (Qg) (Max) @ Vgs	160 nC @ 15 V
Vgs (Max)	+15V, -4V
Input Capacitance (Ciss) (Max) @ Vds	4818 pF @ 1000 V
FET Feature	-
Power Dissipation (Max)	469W (Tc)
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-3
Package / Case	TO-247-3

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