BSL373SNH6327XTSA1 Details_BSL373SNH6327XTSA1 PDF Document_Infineon Technologies-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	OptiMOS™
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	230mOhm @ 2A, 10V
Vgs(th) (Max) @ Id	4V @ 218µA
Gate Charge (Qg) (Max) @ Vgs	9.3 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	265 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	2W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TSOP-6-6
Package / Case	SOT-23-6 Thin, TSOT-23-6

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