NTE455 Details_NTE455 PDF Document_NTE Electronics, Inc-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bag
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	25mA
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	3.5 pF @ 10 V
FET Feature	Standard
Power Dissipation (Max)	200mW (Ta)
Operating Temperature	-55°C ~ 125°C
Mounting Type	Surface Mount
Supplier Device Package	-
Package / Case	SOT-103

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