STFI10N62K3 Details_STFI10N62K3 PDF Document_STMicroelectronics-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	SuperMESH3™
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	620 V
Current - Continuous Drain (Id) @ 25°C	8.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	750mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	42 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1250 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	30W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I2PAKFP (TO-281)
Package / Case	TO-262-3 Full Pack, I²Pak

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