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MOSFETs - Single
PSMN8R9-100BSEJ Picture

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PSMN8R9-100BSEJ

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In Stock:17,436(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
-
Package
Tape & Reel (TR)
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
75A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
128 nC @ 10 V
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
296W
Operating Temperature
175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other
Price advantage, PSMN8R9-100BSEJ is available in stock and can be delivered on the same day
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