CSD17305Q5A Details_CSD17305Q5A PDF Document_Texas Instruments-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	NexFET™
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	29A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	3V, 8V
Rds On (Max) @ Id, Vgs	3.4mOhm @ 30A, 8V
Vgs(th) (Max) @ Id	1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	18.3 nC @ 4.5 V
Vgs (Max)	+10V, -8V
Input Capacitance (Ciss) (Max) @ Vds	2.6 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	3.1W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-VSONP (5x6)
Package / Case	8-PowerTDFN

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