BSS138P,215 Details_BSS138P,215 PDF Document_Nexperia USA Inc.-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	Automotive, AEC-Q101, TrenchMOS™
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	360mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.6Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	0.8 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	50 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	350mW (Ta), 1.14W (Tc)
Operating Temperature	-55°C ~ 150°C (TA)
Mounting Type	Surface Mount
Supplier Device Package	TO-236AB
Package / Case	TO-236-3, SC-59, SOT-23-3

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