TK125V65Z,LQ Details_TK125V65Z,LQ PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	DTMOSVI
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	24A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	125mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	4V @ 1.02mA
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2250 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	190W (Tc)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	5-DFN (8x8)
Package / Case	4-VSFN Exposed Pad

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