BUK9E04-30B,127 Details_BUK9E04-30B,127 PDF Document

MOSFETs - Single

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Specifications

Description	Details
Series	TrenchMOS™
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	56 nC @ 5 V
Vgs (Max)	±15V
Input Capacitance (Ciss) (Max) @ Vds	6526 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	254W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I2PAK
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA

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