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MOSFETs - Single
IPW60R099C6FKSA1 Picture

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IPW60R099C6FKSA1

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In Stock:1,549(Ref. price)
Qty.Unit PriceExt. Price
1
$7.32350
$7.32350
Documents
Specifications
DescriptionDetails
Series
CoolMOS™
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
37.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
99mOhm @ 18.1A, 10V
Vgs(th) (Max) @ Id
3.5V @ 1.21mA
Gate Charge (Qg) (Max) @ Vgs
119 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2660 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
278W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3
Package / Case
TO-247-3
Other
Price advantage, IPW60R099C6FKSA1 is available in stock and can be delivered on the same day
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