NTNS3C94NZT5G Details_NTNS3C94NZT5G PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12 V
Current - Continuous Drain (Id) @ 25°C	384mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	480mOhm @ 100mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	0.6 nC @ 4.5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	35 pF @ 9.6 V
FET Feature	-
Power Dissipation (Max)	120mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	3-XLLGA (0.62x0.62)
Package / Case	3-XFDFN

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