NVTFS9D6P04M8LTAG Details_NVTFS9D6P04M8LTAG PDF Document

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	13A (Ta), 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	9.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.4V @ 580µA
Gate Charge (Qg) (Max) @ Vgs	34.6 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2312 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	3.2W (Ta), 75W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-WDFN (3.3x3.3)
Package / Case	8-PowerWDFN

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