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MOSFETs - Single
SIE816DF-T1-E3 Picture

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SIE816DF-T1-E3

  • Vishay Siliconix
  • New
  • MOSFET N-CH 60V 60A 10POLARPAK
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In Stock:19,068(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
TrenchFET®
Package
Tape & Reel (TR)
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
7.4mOhm @ 19.8A, 10V
Vgs(th) (Max) @ Id
4.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
77 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3100 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
5.2W (Ta), 125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
10-PolarPAK® (L)
Package / Case
10-PolarPAK® (L)
Other
Price advantage, SIE816DF-T1-E3 is available in stock and can be delivered on the same day
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