CSD16322Q5 Details_CSD16322Q5 PDF Document_Texas Instruments-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	NexFET™
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	21A (Ta), 97A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	3V, 8V
Rds On (Max) @ Id, Vgs	5mOhm @ 20A, 8V
Vgs(th) (Max) @ Id	1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9.7 nC @ 4.5 V
Vgs (Max)	+10V, -8V
Input Capacitance (Ciss) (Max) @ Vds	1365 pF @ 12.5 V
FET Feature	-
Power Dissipation (Max)	3.1W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-VSON-CLIP (5x6)
Package / Case	8-PowerTDFN

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