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MOSFETs - Single
PHD9NQ20T,118 Picture

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PHD9NQ20T,118

  • Nexperia USA Inc.
  • New
  • MOSFET N-CH 200V 8.7A DPAK
  • Datasheet download
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In Stock:19,466(Ref. price)
Qty.Unit PriceExt. Price
1
$0.32738
$0.32738
Documents
Specifications
DescriptionDetails
Series
TrenchMOS™
Package
Tape & Reel (TR)
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
400mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
959 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
88W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DPAK
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Other
Price advantage, PHD9NQ20T,118 is available in stock and can be delivered on the same day
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