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SI4484EY-T1-E3 Picture

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SI4484EY-T1-E3

  • Vishay Siliconix
  • New
  • MOSFET N-CH 100V 4.8A 8SO
  • Datasheet download
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In Stock:17,168(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
34mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
1.8W (Ta)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)
Other
Price advantage, SI4484EY-T1-E3 is available in stock and can be delivered on the same day
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