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MOSFETs - Single
PHU101NQ03LT,127 Picture

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PHU101NQ03LT,127

  • NXP USA Inc.
  • New
  • MOSFET N-CH 30V 75A IPAK
  • Datasheet download
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In Stock:17,628(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
TrenchMOS™
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
5.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2180 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
166W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I-PAK
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Other
Price advantage, PHU101NQ03LT,127 is available in stock and can be delivered on the same day
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