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MOSFETs - Single
IXFR10N100Q Picture

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IXFR10N100Q

  • IXYS
  • New
  • MOSFET N-CH 1000V 9A ISOPLUS247
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In Stock:18,582(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
HiPerFET™
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.2Ohm @ 5A, 10V
Vgs(th) (Max) @ Id
5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
90 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2900 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
250W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
ISOPLUS247™
Package / Case
ISOPLUS247™
Other
Price advantage, IXFR10N100Q is available in stock and can be delivered on the same day
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