IRF6620TR1PBF Details_IRF6620TR1PBF PDF Document_Infineon Technologies-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	HEXFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	27A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.7mOhm @ 27A, 10V
Vgs(th) (Max) @ Id	2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	42 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4130 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	2.8W (Ta), 89W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DIRECTFET™ MX
Package / Case	DirectFET™ Isometric MX

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