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MOSFETs - Single
FCU850N80Z Picture

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FCU850N80Z

  • ON Semiconductor
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  • MOSFET N-CH 800V 6A IPAK
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In Stock:3,287(Ref. price)
Qty.Unit PriceExt. Price
1
$1.73760
$1.73760
Documents
Specifications
DescriptionDetails
Series
SuperFET® II
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
850mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
4.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1315 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
75W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I-Pak
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Other
Price advantage, FCU850N80Z is available in stock and can be delivered on the same day
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