NTA4001NT1 Details_NTA4001NT1 PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	238mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	3Ohm @ 10mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	20 pF @ 5 V
FET Feature	-
Power Dissipation (Max)	300mW (Tj)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-75, SOT-416
Package / Case	SC-75, SOT-416

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