CSD17585F5 Details_CSD17585F5 PDF Document_Texas Instruments-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	FemtoFET™
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	5.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	27mOhm @ 900mA, 10V
Vgs(th) (Max) @ Id	1.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	5.1 nC @ 10 V
Vgs (Max)	20V
Input Capacitance (Ciss) (Max) @ Vds	380 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	3-PICOSTAR
Package / Case	3-SMD, No Lead

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