NTD3813NT4G Details_NTD3813NT4G PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	16 V
Current - Continuous Drain (Id) @ 25°C	9.6A (Ta), 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8.75mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12.8 nC @ 4.5 V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	963 pF @ 12 V
FET Feature	-
Power Dissipation (Max)	1.2W (Ta), 34.9W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DPAK
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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