SSM3J35CT,L3F Details_SSM3J35CT,L3F PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	π-MOSVI
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4V
Rds On (Max) @ Id, Vgs	8Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	12.2 pF @ 3 V
FET Feature	-
Power Dissipation (Max)	100mW (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	CST3
Package / Case	SC-101, SOT-883

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