TPCC8104,L1Q Details_TPCC8104,L1Q PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	U-MOSVI
Package	Tape & Reel (TR)
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	58 nC @ 10 V
Vgs (Max)	+20V, -25V
Input Capacitance (Ciss) (Max) @ Vds	2260 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	700mW (Ta), 27W (Tc)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance (3.3x3.3)
Package / Case	8-PowerVDFN

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