2SK3408-T1B-AT Details_2SK3408-T1B-AT PDF Document_Renesas Electronics America Inc-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	43 V
Current - Continuous Drain (Id) @ 25°C	1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	195mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	4 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	230 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	200mW (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	SC-96-3, Thin Mini Mold
Package / Case	SC-96

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