FQAF19N60 Details_FQAF19N60 PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：18,422(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	QFET®
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	11.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	380mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	90 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	3600 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	120W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-3PF
Package / Case	TO-3P-3 Full Pack

Other

Price advantage, FQAF19N60 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
SIRA60DP-T1-RE3	Vishay Siliconix	MOSFETs - Single	Datasheet	MOSFET N-CH 30V 100A PPAK SO-8	$0.62274	In Stock:18760
HUF76009P3	Fairchild Semiconductor	MOSFETs - Single	Datasheet	N-CHANNEL POWER MOSFET	$0.51940	In Stock:9884
IPAN60R800CEXKSA1	Infineon Technologies	MOSFETs - Single	Datasheet	MOSFET N-CH 600V 8.4A TO220	$0.95	In Stock:2648
SQ4401EY-T1_GE3	Vishay Siliconix	MOSFETs - Single	Datasheet	MOSFET P-CH 40V 17.3A 8SO	$2.73420	In Stock:2981
IPB025N10N3GE8187ATMA1	Infineon Technologies	MOSFETs - Single	Datasheet	MOSFET N-CH 100V 180A TO263-7	$3.63562	In Stock:18770