2SK4151TZ-E Details_2SK4151TZ-E PDF Document_Renesas Electronics America Inc-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150 V
Current - Continuous Drain (Id) @ 25°C	1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4V
Rds On (Max) @ Id, Vgs	1.95Ohm @ 500mA, 4V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	3.5 nC @ 4 V
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	98 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	750mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-92
Package / Case	TO-226-3, TO-92-3 (TO-226AA)

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