IRFHM4234TRPBF Details_IRFHM4234TRPBF PDF Document_International Rectifier-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	FASTIRFET™, HEXFET®
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2.1V @ 25µA
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1.011 pF @ 13 V
FET Feature	-
Power Dissipation (Max)	2.8W (Ta), 28W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	-
Package / Case	8-TQFN Exposed Pad

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