APT100MC120JCU2 Details_APT100MC120JCU2 PDF Document_Microchip Technology-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	143A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	17mOhm @ 100A, 20V
Vgs(th) (Max) @ Id	2.3V @ 2mA
Gate Charge (Qg) (Max) @ Vgs	360 nC @ 20 V
Vgs (Max)	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	5960 pF @ 1000 V
FET Feature	-
Power Dissipation (Max)	600W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Supplier Device Package	SOT-227
Package / Case	SOT-227-4, miniBLOC

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