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SI7403BDN-T1-E3 Picture

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SI7403BDN-T1-E3

  • Vishay Siliconix
  • New
  • MOSFET P-CH 20V 8A PPAK1212-8
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In Stock:19,874(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
74mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 8 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
430 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 9.6W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8
Package / Case
PowerPAK® 1212-8
Other
Price advantage, SI7403BDN-T1-E3 is available in stock and can be delivered on the same day
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