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MOSFETs - Single
IXTA02N250 Picture

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IXTA02N250

  • IXYS
  • New
  • MOSFET N-CH 2500V 200MA TO263
  • Datasheet download
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In Stock:20,016(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
-
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
2500 V
Current - Continuous Drain (Id) @ 25°C
200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
450Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7.4 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
116 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (IXTA)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other
Price advantage, IXTA02N250 is available in stock and can be delivered on the same day
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