2SK1828TE85LF Details_2SK1828TE85LF PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	50mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V
Rds On (Max) @ Id, Vgs	40Ohm @ 10mA, 2.5V
Vgs(th) (Max) @ Id	1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	10V
Input Capacitance (Ciss) (Max) @ Vds	5.5 pF @ 3 V
FET Feature	-
Power Dissipation (Max)	200mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-59
Package / Case	TO-236-3, SC-59, SOT-23-3

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