AON1605_001 Details_AON1605_001 PDF Document_Alpha & Omega Semiconductor Inc.-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	700mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	710mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	750 nC @ 4.5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	50 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	900mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	3-DFN (1.0 x 0.60)
Package / Case	3-UFDFN

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