AO3418L Details_AO3418L PDF Document_Alpha & Omega Semiconductor Inc.-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Rds On (Max) @ Id, Vgs	60mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id	1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	3.6 nC @ 4.5 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	270 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	1.4W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3
Package / Case	TO-236-3, SC-59, SOT-23-3

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