IRLHM620TRPBF Details_IRLHM620TRPBF PDF Document_Infineon Technologies-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	HEXFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	26A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Rds On (Max) @ Id, Vgs	2.5mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	78 nC @ 4.5 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	3620 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	2.7W (Ta), 37W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PQFN (3x3)
Package / Case	8-PowerTDFN

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