SCT50N120 Details_SCT50N120 PDF Document_STMicroelectronics-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	69mOhm @ 40A, 20V
Vgs(th) (Max) @ Id	3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	122 nC @ 20 V
Vgs (Max)	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	1900 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	318W (Tc)
Operating Temperature	-55°C ~ 200°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	HiP247™
Package / Case	TO-247-3

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