NTMS4P01R2 Details_NTMS4P01R2 PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12 V
Current - Continuous Drain (Id) @ 25°C	3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	45mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id	1.15V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 4.5 V
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	1850 pF @ 9.6 V
FET Feature	-
Power Dissipation (Max)	790mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOIC
Package / Case	8-SOIC (0.154", 3.90mm Width)

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