IRLU3802PBF Details_IRLU3802PBF PDF Document_International Rectifier-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	HEXFET®
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12 V
Current - Continuous Drain (Id) @ 25°C	84A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.8V, 4.5V
Rds On (Max) @ Id, Vgs	8.5mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id	1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	41 nC @ 5 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	2.49 pF @ 6 V
FET Feature	-
Power Dissipation (Max)	88W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I-PAK
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA

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