RM2A3P60S4 Details_RM2A3P60S4 PDF Document_Rectron USA-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	180mOhm @ 2A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	600 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	1.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-223-3
Package / Case	TO-261-4, TO-261AA

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