IRFH5255TRPBF Details_IRFH5255TRPBF PDF Document_Infineon Technologies-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	HEXFET®
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	15A (Ta), 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs	14.5 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	988 pF @ 13 V
FET Feature	-
Power Dissipation (Max)	3.6W (Ta), 26W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-PQFN (5x6)
Package / Case	8-PowerVDFN

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