HTNFET-T Details_HTNFET-T PDF Document_Honeywell Aerospace-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	HTMOS™
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	-
Drive Voltage (Max Rds On, Min Rds On)	5V
Rds On (Max) @ Id, Vgs	400mOhm @ 100mA, 5V
Vgs(th) (Max) @ Id	2.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	4.3 nC @ 5 V
Vgs (Max)	10V
Input Capacitance (Ciss) (Max) @ Vds	290 pF @ 28 V
FET Feature	-
Power Dissipation (Max)	50W (Tj)
Operating Temperature	-55°C ~ 225°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	4-Power Tab
Package / Case	4-SIP

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