SPD50P03L Details_SPD50P03L PDF Document_Infineon Technologies-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	OptiMOS™
Package	Bulk
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	126 nC @ 10 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	6.88 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	P-TO252-5
Package / Case	TO-252-5, DPak (4 Leads + Tab), TO-252AD

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