IPD60R600E6ATMA1 Details_IPD60R600E6ATMA1 PDF Document_Infineon Technologies-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	CoolMOS™ E6
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	600mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id	3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs	20.5 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	440 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	63W (Tc)
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	TO-252
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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