TSM1N45DCS RLG Details_TSM1N45DCS RLG PDF Document_Taiwan Semiconductor Corporation-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	450 V
Current - Continuous Drain (Id) @ 25°C	500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.25Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id	4.9V @ 250mA
Gate Charge (Qg) (Max) @ Vgs	6.5 nC @ 10 V
Vgs (Max)	±50V
Input Capacitance (Ciss) (Max) @ Vds	185 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	900mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOP
Package / Case	8-SOIC (0.154", 3.90mm Width)

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