TK17E80W,S1X Details_TK17E80W,S1X PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	DTMOSIV
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	17A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	290mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id	4V @ 850µA
Gate Charge (Qg) (Max) @ Vgs	32 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2050 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	180W (Tc)
Operating Temperature	150°C
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3

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